1 research outputs found
Π£ΡΠΈΡΠ°Ρ ΠΏΠΎΠ²ΡΡΠΈΠ½ΡΠΊΠΈΡ ΠΏΡΠΎΡΠ΅ΡΠ° Π½Π° ΡΡΡΡΡΠ½ΠΎ-Π½Π°ΠΏΠΎΠ½ΡΠΊΡ ΠΊΠ°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊΡ ΠΎΡΠ³Π°Π½ΡΠΊΠΈΡ ΡΠΎΠ»Π°ΡΠ½ΠΈΡ ΡΠ΅Π»ΠΈΡΠ°
Organic solar cells (OSCs) are emerging low-cost, easy production photovoltaics. Their efficiency is strongly affected by the interface physics that needs to be researched.
In this thesis, the interface physics of metal/inorganic semiconductor and metal/organic semiconductor contacts is considered. The basic structures and operation principles of OSCs are reviewed and a detailed description of the drift-diffusion model (DDM) used for modeling the OSCs is included. An extensive and detailed literature review of different physical effects that can cause the S-kink appearance in the current density-voltage (J-V) characteristics of OSCs is presented. The original research results on ITO/(poly(3,4βethilenedioxythiophene):poly (styrenesulfonate))PEDOT:PSS/(poly(3βhexylthiophene))P3HT:(1β(3βmethoxycarbonyl)propylβ1βphenylβ[6,6]βmethanofullerene) PCBM/Al and ITO/PEDOT:PSS/P3HT:(indeneβC60 bisadduct) ICBA/Al solar cells are presented and discussed. The influence of the surface processes on the shape of OSCsβ J-V characteristics has been investigated by DDM. The surface recombination and thermal injection of charge carriers on the anode and cathode are taken into account through boundary conditions. It is deduced that there are two different types of S-shape deviations in OSCs' J-V characteristics, one arises from the reduced surface recombination velocities (SRVs), and the other is attributed to the large (>0.2eV) injection barrier height for electrons. The measured J-V characteristics of ITO/PEDOT:PSS/P3HT:PCBM/Al and ITO/PEDOT:PSS/P3HT:ICBA/Al solar cells are reproduced well by the DDM. It is anticipated that the S-shaped J-V curves of ITO/PEDOT:PSS/P3HT:ICBA/Al solar cells originate from the large electron barrier height on the cathode, rather than by the reduction of the SRVs.ΠΡΠ³Π°Π½ΡΠΊΠ΅ ΡΠΎΠ»Π°ΡΠ½Π΅ ΡΠ΅Π»ΠΈΡΠ΅ ΡΡ ΡΠ΅ΡΡΠΈΠ½Π΅ ΡΠΎΡΠΎΠ²ΠΎΠ»ΡΠ°ΠΈΡΠ½Π΅ Π½Π°ΠΏΡΠ°Π²Π΅ Π»Π°ΠΊΠ΅ ΠΏΡΠΎΠΈΠ·Π²ΠΎΠ΄ΡΠ΅. ΠΠΈΡ
ΠΎΠ²Π° Π΅ΡΠΈΠΊΠ°ΡΠ½ΠΎΡΡ ΡΠ°ΠΊΠΎ Π·Π°Π²ΠΈΡΠΈ ΠΎΠ΄ ΠΊΠΎΠ½ΡΠ°ΠΊΡΠ½Π΅ ΡΠΈΠ·ΠΈΠΊΠ΅ Π½Π° Π΅Π»Π΅ΠΊΡΡΠΎΠ΄Π½ΠΈΠΌ ΡΠΏΠΎΡΠ΅Π²ΠΈΠΌΠ° ΠΊΠΎΡΡ ΡΡΠ΅Π±Π° ΠΈΡΡΡΠ°ΠΆΠΈΡΠΈ.
Π£ ΠΎΠ²ΠΎΡ ΡΠ΅Π·ΠΈ, Ρ ΡΠ²ΠΎΠ΄Π½ΠΎΠΌ Π΄Π΅Π»Ρ, ΡΠ°Π·ΠΌΠ°ΡΡΠ°Π½Π° ΡΠ΅ ΡΠΈΠ·ΠΈΠΊΠ° Π½Π° ΡΠΏΠΎΡΡ ΠΌΠ΅ΡΠ°Π»Π° ΠΈ Π½Π΅ΠΎΡΠ³Π°Π½ΡΠΊΠΎΠ³ ΠΏΠΎΠ»ΡΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΈΠΊΠ°, ΠΊΠ°ΠΎ ΠΈ Π½Π° ΡΠΏΠΎΡΡ ΠΌΠ΅ΡΠ°Π»Π° ΠΈ ΠΎΡΠ³Π°Π½ΡΠΊΠΎΠ³ ΠΏΠΎΠ»ΡΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΈΠΊΠ°. ΠΡΠ΅Π΄ΡΡΠ°Π²ΡΠ΅Π½Π΅ ΡΡ ΠΎΡΠ½ΠΎΠ²Π½Π΅ ΡΡΡΡΠΊΡΡΡΠ΅ ΠΈ ΠΎΠΏΠΈΡΠ°Π½ ΡΠ΅ ΠΏΡΠΈΠ½ΡΠΈΠΏ ΡΠ°Π΄Π° ΠΎΡΠ³Π°Π½ΡΠΊΠΈΡ
ΡΠΎΠ»Π°ΡΠ½ΠΈΡ
ΡΠ΅Π»ΠΈΡΠ° (ΠΠ‘Π), Π° Π΄ΡΠΈΡΡ-Π΄ΠΈΡΡΠ·ΠΈΠΎΠ½ΠΈ ΠΌΠΎΠ΄Π΅Π» (ΠΠΠ) ΠΊΠΎΡΠΈ ΡΠ΅ ΠΊΠΎΡΠΈΡΡΠΈ Π·Π° ΠΌΠΎΠ΄Π΅Π»ΠΎΠ²Π°ΡΠ΅ ΠΠ‘Π ΡΠ΅ Π΄Π΅ΡΠ°ΡΠ½ΠΎ ΡΠ°Π·ΠΌΠΎΡΡΠ΅Π½. Π‘Π°ΡΡΠ°Π²Π½ΠΈ Π΄Π΅ΠΎ Π΄ΠΈΡΠ΅ΡΡΠ°ΡΠΈΡΠ΅ ΡΠ΅ ΠΈ ΠΎΠΏΡΠ΅ΠΆΠ°Π½ ΠΏΡΠ΅Π³Π»Π΅Π΄ Π»ΠΈΡΠ΅ΡΠ°ΡΡΡΠ΅ Π½Π° ΡΠ΅ΠΌΡ ΡΠ°Π·Π»ΠΈΡΠΈΡΠΈΡ
ΡΠΈΠ·ΠΈΡΠΊΠΈΡ
Π΅ΡΠ΅ΠΊΠ°ΡΠ° ΠΊΠΎΡΠΈ ΠΌΠΎΠ³Ρ ΠΏΡΠΎΡΠ·ΡΠΎΠΊΠΎΠ²Π°ΡΠΈ ΠΏΠΎΡΠ°Π²Ρ S-Π΄Π΅Π²ΠΈΡΠ°ΡΠΈΡΠ΅ ΡΡΡΡΡΠ½ΠΎ-Π½Π°ΠΏΠΎΠ½ΡΠΊΠ΅ (I-V) ΠΊΠ°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊΠ΅ ΠΠ‘Π. Π‘ΠΏΡΠΎΠ²Π΅Π΄Π΅Π½ΠΎ ΡΠ΅ ΠΎΡΠΈΠ³Π½Π°Π»Π½ΠΎ ΠΈΡΡΡΠ°ΠΆΠΈΠ²Π°ΡΠ΅ Π½Π° ITO/(poly(3,4βethilenedioxythiophene):poly (styrenesulfonate))PEDOT:PSS/(poly(3βhexylthiophene))P3HT:(1β(3βmethoxycarbonyl)propylβ1βphenylβ[6,6]βmethanofullerene) PCBM/Al and ITO/PEDOT:PSS/P3HT:(indeneβC60 bisadduct) ICBA/Al ΡΠΎΠ»Π°ΡΠ½ΠΈΠΌ ΡΠ΅Π»ΠΈΡΠ°ΠΌΠ° ΠΈ Π΄ΠΎΠ±ΠΈΡΠ΅Π½ΠΈ ΡΠ΅Π·ΡΠ»ΡΠ°ΡΠΈ ΡΡ ΠΏΡΠ΅Π΄ΡΡΠ°Π²ΡΠ΅Π½ΠΈ ΠΈ ΠΏΡΠΎΠ΄ΠΈΡΠΊΡΡΠΎΠ²Π°Π½ΠΈ. Π£ΡΠΈΡΠ°Ρ ΠΏΠΎΠ²ΡΡΠΈΠ½ΡΠΊΠΈΡ
ΠΏΡΠΎΡΠ΅ΡΠ° Π½Π° ΠΎΠ±Π»ΠΈΠΊ I-V ΠΊΠ°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊΠ΅ ΠΠ‘Π ΡΠ΅ ΠΈΡΠΏΠΈΡΠ°Π½ ΠΏΠΎΠΌΠΎΡΡ ΠΠΠ. ΠΠΎΠ²ΡΡΠΈΠ½ΡΠΊΠ° ΡΠ΅ΠΊΠΎΠΌΠ±ΠΈΠ½Π°ΡΠΈΡΠ° ΠΈ ΡΠ΅ΡΠΌΠΈΡΠΊΠ° ΠΈΠ½ΡΠ΅ΠΊΡΠΈΡΠ° Π½ΠΎΡΠΈΠ»Π°ΡΠ° Π½Π°Π΅Π»Π΅ΠΊΡΡΠΈΡΠ°ΡΠ° Π½Π° Π°Π½ΠΎΠ΄ΠΈ ΠΈ ΠΊΠ°ΡΠΎΠ΄ΠΈ ΡΠ·Π΅ΡΠ΅ ΡΡ Ρ ΠΎΠ±Π·ΠΈΡ ΠΊΡΠΎΠ· Π³ΡΠ°Π½ΠΈΡΠ½Π΅ ΡΡΠ»ΠΎΠ²Π΅. ΠΠ°ΠΊΡΡΡΠ΅Π½ΠΎ ΡΠ΅ Π΄Π° ΠΏΠΎΡΡΠΎΡΠ΅ Π΄Π²Π΅ ΡΠ°Π·Π»ΠΈΡΠΈΡΠ΅ Π²ΡΡΡΠ΅ S-Π΄Π΅Π²ΠΈΡΠ°ΡΠΈΡΠ΅ I-V ΠΊΡΠΈΠ²Π΅ ΠΠ‘Π. ΠΡΠ²Π° Π²ΡΡΡΠ° ΠΏΠΎΡΠΈΡΠ΅ ΠΎΠ΄ ΡΠ΅Π΄ΡΠΊΠΎΠ²Π°Π½ΠΈΡ
Π±ΡΠ·ΠΈΠ½Π° ΠΏΠΎΠ²ΡΡΠΈΠ½ΡΠΊΠ΅ ΡΠ΅ΠΊΠΎΠΌΠ±ΠΈΠ½Π°ΡΠΈΡΠ΅ (ΠΠΠ ) Π΄ΠΎΠΊ ΡΠ΅ Π΄ΡΡΠ³Π° Π²ΡΡΡΠ° ΠΌΠΎΠΆΠ΅ ΠΏΡΠΈΠΏΠΈΡΠ°ΡΠΈ Π²Π΅Π»ΠΈΠΊΠΎΡ Π²ΠΈΡΠΈΠ½ΠΈ ΠΈΠ½ΡΠ΅ΠΊΡΠΈΠΎΠ½Π΅ Π±Π°ΡΠΈΡΠ΅ΡΠ΅ (>0,2eV) Π·Π° Π΅Π»Π΅ΠΊΡΡΠΎΠ½Π΅. ΠΠ·ΠΌΠ΅ΡΠ΅Π½Π΅ I-V ΠΊΠ°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊΠ΅ ITO/PEDOT:PSS/P3HT:PCBM/Al ΠΈ ITO/PEDOT:PSS/P3HT:ICBA/Al ΡΠΎΠ»Π°ΡΠ½ΠΈΡ
ΡΠ΅Π»ΠΈΡΠ° ΡΡ Π΄ΠΎΠ±ΡΠΎ ΡΠ΅ΠΏΡΠΎΠ΄ΡΠΊΠΎΠ²Π°Π½Π΅ ΠΏΠΎΠΌΠΎΡΡ ΠΠΠ. Π£ΡΠ²ΡΡΠ΅Π½ΠΎ ΡΠ΅ Π΄Π° S-Π΄Π΅Π²ΠΈΡΠ°ΡΠΈΡΠ° I-V ΠΊΡΠΈΠ²ΠΈΡ
ITO/PEDOT:PSS/P3HT:ICBA/Al ΡΠΎΠ»Π°ΡΠ½ΠΈΡ
ΡΠ΅Π»ΠΈΡΠ° ΠΏΠΎΡΠΈΡΠ΅ ΠΎΠ΄ Π²Π΅Π»ΠΈΠΊΠ΅ Π²ΠΈΡΠΈΠ½Π΅ ΠΈΠ½ΡΠ΅ΠΊΡΠΈΠΎΠ½Π΅ Π±Π°ΡΠΈΡΠ΅ΡΠ΅ Π·Π° Π΅Π»Π΅ΠΊΡΡΠΎΠ½Π΅ Π½Π° ΠΊΠ°ΡΠΎΠ΄ΠΈ, Π° Π½Π΅ ΠΎΠ΄ ΡΠ΅Π΄ΡΠΊΠΎΠ²Π°Π½ΠΈΡ
ΠΠΠ